Optically pumped GaSb/Al_0.6Ga_0.4Sb multiquantum well lasers operating in the λ=1.5-1.6 μm regionTEMKIN, H; TSANG, W. T.Journal of applied physics. 1984, Vol 55, Num 5, pp 1413-1415, issn 0021-8979Article

Preparation of 1.78-μm wavelength Al_0.2Ga_0.8Sb/GaSb double-heterostructure lasers by molecular beam epitaxyTSANG, W. T; OLSSON, N. A.Applied physics letters. 1983, Vol 43, Num 1, pp 8-10, issn 0003-6951Article

Noise equivalent power calculation: application to Ga_0.96Al_0.04Sb avalanche photodiodesLUQUET, H; GOUSKOV, L; PEROTIN, M et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6541-6545, issn 0021-8979Article

Photodétecteurs à base de Ga_1-xAl_xSb dans la gamme 1,3-1,6 μm = 1,3-1,6 μm photodetectors involving Ga_1-xAl_xSbGOUSKOV, L; BOUSTANI, M; BOUGNOT, G et al.Revue de physique appliquée. 1983, Vol 18, Num 12, pp 781-788, issn 0035-1687Article

Observation of room temperature excitons in GaSb-AlGaSb multi-quantum wellsMIYAZAWA, T; TARUCHA, S; OHMORI, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L200-L202, issn 0021-4922, 2Article

High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diodeTOBA, H; NOSU, K.Electronics Letters. 1987, Vol 23, Num 5, pp 188-190, issn 0013-5194Article

Effect of composition and growth conditions on the properties of Al_xGa_1-xSb epilayersSU, Y. K; CHEN, S. C; JUANG, F. S et al.Solid-state electronics. 1989, Vol 32, Num 9, pp 733-738, issn 0038-1101Article

Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μ prepared by molecular beam epitaxyCHIU, T. H; TSANG, W. T; DITZENBERGER, J. A et al.Applied physics letters. 1986, Vol 49, Num 17, pp 1051-1052, issn 0003-6951Article

Growth temperature dependence of intrinsic and extrinsic acceptor concentration in (Ga,Al)Sb evaluated by C-V characteristics of metal-insulator-semiconductor structuresTAKEDA, Y; NODA, S; SASAKI, A et al.Journal of applied physics. 1985, Vol 57, Num 4, pp 1261-1265, issn 0021-8979Article

Diffusion du zinc dans GaAlSb et application à la photodétection infrarouge = Zinc diffusion in GaAlSb and application to infrared photodetectionJOULLIE, A; DE ANDA, F; SALSAC, P et al.Revue de physique appliquée. 1984, Vol 19, Num 3, pp 223-230, issn 0035-1687Article

Room temperature operation of Al_0.17Ga_0.83Sb/GaSb multi-quantum well lasers grown by molecular beam epitaxyOHMORI, Y; TARUCHA, S; HORIKOSHI, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L94-L96, issn 0021-4922Article

p(Ga, Al)Sb/lightly-doped n(In, Ga)Sb heterojunction photodiodeSUKEGAWA, T; MIZUKI, T; TANAKA, A et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp 658-659, issn 0021-4922, 1Article

Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistorsLONGENBACH, K. F; BERESFORD, R; WANG, W. I et al.Solid-state electronics. 1990, Vol 33, Num 9, pp 1211-1213, issn 0038-1101, 3 p.Article

Ionization coefficients in Ga_0.96Al_0.04SbLUQUET, H; PEROTIN, M; GOUSKOV, L et al.Journal of applied physics. 1990, Vol 68, Num 8, pp 3861-3864, issn 0021-8979, 4 p.Article

Measurement of the impact ionization rates in Al_0.06Ga_0.94SbKUWATSUKA, H; MIKAWA, T; MIURA, S et al.Applied physics letters. 1990, Vol 57, Num 3, pp 249-251, issn 0003-6951Article

Etude des transitions excitoniques en bord de bandes dans les systèmes ternaires Hg_1-xCd_xTe et Ga_1-xAl_xSbBouhemadou, Abdelmadjid; Mathieu, Henry.1988, 224 p.Thesis

Photoluminescence studies of LPE Al_xGa_1-xSbKITAMURA, N; YAMAMOTO, H; MAEDA, Y et al.Semiconductor science and technology. 1987, Vol 2, Num 5, pp 318-320, issn 0268-1242Article

Optically pumped laser oscillation at 3.9 μm from Al_0.5Ga_0.5Sb/InAs_0.91Sb_0.9/Al_0.5Ga_0.5Sb double heterostructures grown by molecular beam epitaxy on GaSbVAN DER ZIEL, J. P; CHIU, T. H; TSANG, W. T et al.Applied physics letters. 1986, Vol 48, Num 5, pp 315-317, issn 0003-6951Article

Gold/Ga_0.85Al_0.15Sb schottky diodesGOUSKOV, L; BOUSTANI, M; LUQUET, H et al.Journal of applied physics. 1985, Vol 58, Num 8, pp 3211-3216, issn 0021-8979Article

Liquid phase epitaxial growth of AlGaSbWADA, T; KUBOTA, K; IKOMA, T et al.Journal of crystal growth. 1984, Vol 66, Num 3, pp 493-500, issn 0022-0248Article

Surface treatment of GaSb substrate and extremely low temperature LPE growth of AlGaSbTAKEDA, Y; NODA, S; NAKASHIMA, K et al.Journal of electronic materials. 1984, Vol 13, Num 6, pp 855-866, issn 0361-5235Article

The growth of epitaxial layers with an improved LPE apparatusHEINZ, C; SCHMIDT AUF ALTENSTADT, W.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 2, pp 154-155, issn 0734-211XArticle

Observation of normal-incidence intersubband absorption in n-type Al_0.9Ga_0.91Sb quantum wellsBROWN, E. R; EGLASH, S. J; MCINTOSH, K. A et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 7244-7247, issn 0163-1829Article

LPE growth of p(n)InAs_1―ySb_y―n(p)GaSb(Al_xGa_1―xSb) heterostructuresPRAMATAROVA, L. D.Crystal research and technology (1979). 1984, Vol 19, Num 7, pp 877-880, issn 0232-1300Article

An InAs channel heterojunction field-effect transistor with high transconductanceKANJI YOH; MORIUCHI, T; INOUE, M et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 526-528, issn 0741-3106, 3 p.Article